Fast Analytical Design of Poly-SiGe MEMS Pressure Sensors

被引:0
|
作者
Rochus, V. [1 ]
Wang, B. [1 ]
Chaudhuri, A. Ray [1 ]
Helin, P. [1 ]
Severi, S. [1 ]
Rottenberg, X. [1 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a fast design strategy for Poly-SiGe MEMS pressure sensors, based on circular Kirchhoff-Love plate theory. The underlying analytical model allows for a rapid and accurate evaluation of the sensitivity of the sensors, crucial for improving their design. The accuracy of the new model is demonstrated by comparing its predictions with more computationally expensive simulation techniques (high-order parametric element and three-dimensional fmite element models) and with experimental measurements performed on a 300 mu m membrane fabricated using the Poly-SiGe platform developed at imec.
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页数:4
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