Enhanced photosensitivity of InGaZnO-TFT with a CuPc light absorption layer

被引：15

作者：

Li, Jun ^{[1
,2
]}

Zhou, Fan ^{[1
]}

Lin, Hua-Ping ^{[1
]}

Zhu, Wen-Qing ^{[1
,2
]}

Zhang, Jian-Hua ^{[2
]}

Jiang, Xue-Yin ^{[1
]}

Zhang, Zhi-Lin ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China

[2] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2012年 / 51卷 / 04期

关键词：

Photosensitivity; InGaZnO; CuPc; Transistor;

D O I：

10.1016/j.spmi.2012.02.002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A copper phthalocyanine (CuPc) organic semiconductor is capped onto an amorphous indium-gallium-zinc-oxide (InGaZnO) thin film transistor (TFT) to enhance the photosensitivity of InGaZnO-TFT. The CuPc organic semiconductor is served as a light absorption layer and forms a p-n junction with the InGaZnO film. After 60 s white light illumination, light responsivity (R) of InGaZnO-TFT with a CuPc light absorption layer reaches a value of 148.5 A/W at a gate-source voltage (V-GS) of 20 V. which is much larger than that (31.2 A/W) of the conventional InGaZnO-TFT. The results are attributed to the following mechanism. First, a CuPc layer is employed as the light absorption layer. Second, CuPc/InGaZnO p-n junction enables the injection of electron into InGaZnO film. Our results indicate that using CuPc as light absorption layer is an effective approach to improve the photosensitivity of InGaZnO-TFT. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：538 / 543

页数：6

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