Experimental investigations on thermal, thermocapillary and forced convection in Czochralski crystal growth configuration

被引:0
|
作者
Aleksic, J [1 ]
Szymczyk, JA [1 ]
Leder, A [1 ]
Kowalewski, TA [1 ]
机构
[1] Univ Appl Sci, Dept Thermofluiddynam & Turbomachines, Fachhsch Stralsund, Stralsund, Germany
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
One of the greatest technological and scientific challenges of crystal growth is to achieve homogeneity of the material properties (e.g. electrical resistance in the micro range). According to the present know-how, the cause of fluctuations of the electrical resistance is due to fluctuations of the growth rate of the crystal. One of the possible causes for fluctuations of the growth rate is the instationary convection in the melt. The focus of the project is to examine the influence of the thermal Marangoni effect on the temperature and velocity field due to spatial and temporal variations of the temperature field adjusted from the outside. Moreover, the aims of the project are to analyse the stabilisation effect of rotation on thermocapillary flow, to determine the start of oscillatory motions and to examine the transition of an oscillatory mode to higher modes as well as the transition to turbulent motion.
引用
收藏
页码:627 / 636
页数:10
相关论文
共 50 条
  • [41] Experimental study of convection in a model Czochralski crucible using liquid crystal thermography
    J. Banerjee
    R. Bharadwaj
    K. Muralidhar
    Journal of Visualization, 2006, 9 : 111 - 119
  • [42] Contribution to the Thermal and Hydraulic Study of Forced Convection in Corrugated Configuration Using Nanofluids
    Meriem, Imen
    Benchabi, Rahima
    JOURNAL OF NANOFLUIDS, 2024, 13 (03) : 735 - 748
  • [43] CZOCHRALSKI GROWTH OF OXIDE SINGLE-CRYSTALS UNDER CONDITIONS OF FORCED-CONVECTION IN THE MELT
    MAJCHROWSKI, A
    ZMIJA, J
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 1993, 173 (1-2): : 19 - 22
  • [44] The effect of free convection on solid/liquid interface in the Czochralski crystal growth method
    Mokruchnikov, PW
    CRYSTAL RESEARCH AND TECHNOLOGY, 1999, 34 (09) : 1169 - 1173
  • [45] Comparison of measurements and numerical simulations of melt convection in Czochralski crystal growth of silicon
    Enger, S
    Gräbner, O
    Müller, G
    Breuer, M
    Durst, F
    JOURNAL OF CRYSTAL GROWTH, 2001, 230 (1-2) : 135 - 142
  • [46] EFFECT OF MELT CONVECTION ON THE GROWTH OF ND-YAG CRYSTAL BY THE CZOCHRALSKI METHOD
    HOU, Y
    BAI, F
    WANG, S
    CRYSTAL RESEARCH AND TECHNOLOGY, 1993, 28 (03) : 311 - 315
  • [47] Thermal transport during seeding and shouldering in the czochralski crystal growth
    Saha, A.K.
    Zhang, H.
    Prasad, V.
    American Society of Mechanical Engineers, Heat Transfer Division, (Publication) HTD, 2000, 366 : 253 - 262
  • [48] Numerical Simulation on Effect of Rotation on Thermal Convection in a Shallow Model Czochralski Configuration with a Heated Bottom
    Shen, Ting
    Wu, Chun-Mei
    Li, You-Rong
    CRYSTAL RESEARCH AND TECHNOLOGY, 2018, 53 (09)
  • [49] THE EFFECT OF EXTERNALLY IMPOSED MAGNETIC-FIELDS ON FORCED-CONVECTION IN CZOCHRALSKI CRYSTAL GROWING SYSTEMS
    CARTWRIGHT, R
    SZEKELY, J
    JOURNAL OF METALS, 1985, 37 (11): : A113 - A113
  • [50] Evolution of interface configuration in sapphire single crystal growth via Czochralski method
    Sun, C. T.
    Xue, D. F.
    MATERIALS RESEARCH INNOVATIONS, 2013, 17 (07) : 552 - 556