Simulation Study on the Feasibility of Si as Material for Ultra-Scaled Nanowire Field-Effect Transistors

被引：0

作者：

Stanojevic, Z. ^{[1
]}

Baumgartner, O. ^{[1
]}

Karner, M. ^{[1
]}

Mitterbauer, F. ^{[1
]}

Demel, H. ^{[1
]}

Kernstock, C. ^{[1
]}

机构：

[1] Global TCAD Solut GmbH, Landhausgasse 4-1a, A-1010 Vienna, Austria

来源：

2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) | 2016年

关键词：

MOBILITY;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a simulation framework which allows thorough performance evaluation of ultra-scaled devices. Our simulation approach is based on the full solution of the Boltzmann transport equation (BTE) on subbands as calculated from a k.p-Hamiltonian and including all relevant scattering mechanisms which occur in semiconductors at room temperature. We employ the simulation framework to investigate the performance limits of silicon-based technology for ultra-scaled field-effect transistors in logic applications.

引用

页码：147 / 150

页数：4

共 50 条

[41] SiC Nanowire Field-Effect Transistors Based on Dielectrophoresis
Dai, Zhenqing
Zhang, Liying
Chen, Haiyan
Wei, Liangming
Xu, Dong
Zhang, Yafei
2010 INTERNATIONAL CONFERENCE ON INFORMATION, ELECTRONIC AND COMPUTER SCIENCE, VOLS 1-3, 2010, : 1710 - 1712
[42] The Optoelectronic Properties of PbS Nanowire Field-Effect Transistors
Lee, Seunghyun
Noh, Jin-Seo
Kim, Jeongmin
Kim, MinGin
Jang, So Young
Park, Jeunghee
Lee, Wooyoung
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2013, 12 (06) : 1135 - 1138
[43] Design of Radial Nanowire Tunnel Field-Effect Transistors
Dey, A. W.
Lind, E.
Svensson, J.
Ek, M.
Thelander, C.
Wernersson, L. -E.
2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2014, : 81 - +
[44] Ambipolar and Unipolar PbSe Nanowire Field-Effect Transistors
Kim, David K.
Vemulkar, Tarun R.
Oh, Soong Ju
Koh, Weon-Kyu
Murray, Christopher B.
Kagan, Cherie R.
ACS NANO, 2011, 5 (04) : 3230 - 3236
[45] FIELD-EFFECT TRANSISTORS IN A-SI-H
THOMPSON, MJ
JOHNSON, NM
MOYER, MD
LUJAN, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1258 - 1258
[46] Atomistic modeling of gate-all-around Si-nanowire field-effect transistors
Pecchia, Alessandro
Salamandra, Luigi
Latessa, Luca
Aradi, Balint
Frauenheim, Thomas
Di Carlo, Aldo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) : 3159 - 3167
[47] Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles
Zhang, Dong
Kong, Tao
Wang, Miao
Xiao, Miao
Zhang, Zhaochun
Cheng, Guosheng
APPLIED PHYSICS LETTERS, 2016, 109 (10) : 227 - 231
[48] Three-dimensional simulation study of the improved on/off current ratio in silicon nanowire field-effect transistors
Choi, Chang-Yong
Cho, Won-Ju
Koo, Sang-Mo
Kim, Sangsig
Li, Qiliang
Suehle, John S.
Richter, Curt A.
Vogel, Eric M.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (03) : 1680 - 1684
[49] Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors
Khayer, M. Abul
Lake, Roger K.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (10)
[50] Material Characterization and Device Simulation of GeSn Alloys for Field-Effect Transistors Applications
Liang, Renrong
Liu, Lei
Wang, Jing
Xu, Jun
2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2016, : 430 - 435

← 1 2 3 4 5 →