Ultrafast all-optical switches based on intersubband transitions in GaN/AlN multiple quantum wells for Tb/s operation

被引：0

作者：

Dawlaty, JM ^{[1
]}

Rana, F ^{[1
]}

Schaff, WJ ^{[1
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

GaN, AIN, InN and Their Alloys | 2005年 / 831卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Theoretical and experimental results on ultra-fast all-optical switches based on intersubband transitions for Tb/s operation are presented. Designs for engineering intersubband transitions (ISBT) in GaN/AlN quantum wells near communication wavelengths (similar to 1.55 mu m) and for realizing all-optical switches requiring small pulse energies are discussed. Optimized designs show all-optical switching at Tb/s data rates with pulse energies as small as 200 fJ. Experimental realization of narrow line-width ISBT in GaN/AlN superlattices is also demonstrated.

引用

页码：379 / 384

页数：6

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