Micromagnetic studies of domain structures and switching properties in a magnetoresistive random access memory cell

被引：1
|
作者：
Wu, GG [1 ]
Yu, JA
Wei, FL
Liu, XX
WEi, D
机构：
[1] Lanzhou Univ, Res Inst Magnet Mat, Lanzhou 730000, Peoples R China
[2] Tsinghua Univ, Key Lab Adv Mat, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 10期
关键词：
D O I：
10.1063/1.1852193
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Domain structures and switching properties in the free layer of a magnetoresistive random access memory (MRAM) cell are studied, based on a micromagnetic simulation model. A primary design of a MRAM cell for 0-1 data storage requires a single domain structure in the free layer. The stability of the single domain structure is analyzed versus the aspect ratio and the thickness of a cell. The data-storage process in these MRAM cells are studied by applying external fields at different angles and different magnitude. The angular dependence of the switching field is simulated and compared with the Stoner-Wohlfarth model. (c) 2005 American Institute of Physics.
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页数：3
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