Magnetoresistive Random Access Memory

被引：377

作者：

Apalkov, Dmytro ^{[1
]}

Dieny, Bernard ^{[2
]}

Slaughter, J. M. ^{[3
]}

机构：

[1] Samsung Elect, Semicond R&D Ctr, San Jose, CA 95134 USA

[2] Grenoble Alpes Univ, SPINTEC, CEA, CNRS,CEA Grenoble,INAC, Grenoble, France

[3] Everspin Technol Inc, Chandler, AZ 85224 USA

来源：

PROCEEDINGS OF THE IEEE | 2016年 / 104卷 / 10期

关键词：

Magnetic tunnel junctions (MT[!text type='Js']Js[!/text]); MRAM; spin electronics; spin-transfer torque (STT); spintronics; STT-MRAM; thermally assisted MRAM; toggle; tunnel magnetoresistance; MAGNETIC TUNNEL-JUNCTIONS; PERPENDICULAR-ANISOTROPY; SPIN-TORQUE; ROOM-TEMPERATURE; SENSING SCHEME; ATOMIC LAYERS; TOGGLE MRAM; MGO; INPLANE; NANOPILLARS;

D O I：

10.1109/JPROC.2016.2590142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations are described with a particular focus on spin-transfer torque MRAM (STT-MRAM) which is currently receiving the greatest attention. The working principles of these various MRAM generations, the status of their developments, and demonstrations of working circuits, including already commercialized MRAM products, are discussed.

引用

页码：1796 / 1830

页数：35

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