Characterization of bulk GaN grown by sublimation technique

被引：7
|
作者：
Naoi, Y [1 ]
Kobatake, K [1 ]
Kurai, S [1 ]
Nishino, K [1 ]
Sato, H [1 ]
Nozaki, M [1 ]
Sakai, S [1 ]
Shintani, Y [1 ]
机构：
[1] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
bulk; GaN; sublimation; SIMS; XRD;
D O I：
10.1016/S0022-0248(98)00218-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have characterized a bulk GaN grown by sublimation technique by means of the high resolution X-ray diffraction measurements: the secondary ion mass spectrometry measurements, the Raman spectroscopy measurements and the resistivity measurements. The results indicated that a bulk GaN was of relatively high purity with a very high crystal perfection. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：163 / 166
页数：4
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