Characterization of bulk GaN grown by sublimation technique

被引：7
|
作者：
Naoi, Y [1 ]
Kobatake, K [1 ]
Kurai, S [1 ]
Nishino, K [1 ]
Sato, H [1 ]
Nozaki, M [1 ]
Sakai, S [1 ]
Shintani, Y [1 ]
机构：
[1] Univ Tokushima, Dept Elect & Elect Engn, Tokushima 7708506, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
bulk; GaN; sublimation; SIMS; XRD;
D O I：
10.1016/S0022-0248(98)00218-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have characterized a bulk GaN grown by sublimation technique by means of the high resolution X-ray diffraction measurements: the secondary ion mass spectrometry measurements, the Raman spectroscopy measurements and the resistivity measurements. The results indicated that a bulk GaN was of relatively high purity with a very high crystal perfection. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：163 / 166
页数：4
相关论文
共 50 条
  • [1] Characterization of bulk GaN grown by sublimation technique
    Naoi, Y.
    Kobatake, K.
    Kurai, S.
    Nishino, K.
    Sato, H.
    Nozaki, M.
    Sakai, S.
    Shintani, Y.
    Journal of Crystal Growth, 189-190 : 163 - 166
  • [2] Investigations of the growth conditions for GaN-bulk crystals grown by the sublimation technique
    Rost, H. -J.
    Sichel, D.
    Mueller, R.
    Gogova, D.
    Schulz, T.
    Albrecht, M.
    Fornari, R.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2219 - +
  • [3] X-ray characterization of bulk AlN single crystals grown by the sublimation technique
    Raghothamachar, B
    Dudley, M
    Rojo, JC
    Morgan, K
    Schowalter, LJ
    JOURNAL OF CRYSTAL GROWTH, 2003, 250 (1-2) : 244 - 250
  • [4] Optical characterization of bulk GaN grown by a Na-Ga melt technique
    Skromme, BJ
    Palle, K
    Poweleit, CD
    Yamane, H
    Aoki, M
    DiSalvo, FJ
    JOURNAL OF CRYSTAL GROWTH, 2002, 246 (3-4) : 299 - 306
  • [5] Photopumped stimulated emission from homoepitaxial GaN grown on bulk GaN prepared by sublimation method
    Kurai, S
    Naoi, Y
    Abe, T
    Ohmi, S
    Sakai, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (1B): : L77 - L79
  • [6] X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds
    Raghothamachar, B
    Dudley, M
    Wang, BG
    Callahan, M
    Biss, D
    Konkapaka, P
    Wu, HQ
    Spencer, M
    GAN, AIN, INN AND THEIR ALLOYS, 2005, 831 : 441 - 446
  • [7] The surface treatment with NH3 for GaN grown by a sublimation technique
    Lee, HJ
    Lee, JJ
    Park, YJ
    Min, SK
    Lyou, JH
    Park, SJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (04) : 479 - 482
  • [8] The surface treatment with NH3 for GaN grown by a sublimation technique
    Lee, HJ
    Lee, SW
    Min, SK
    Lyou, J
    Park, SJ
    MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 216 - 217
  • [9] Growth of bulk GaN by sublimation method
    Sakai, S
    Sato, H
    Sugahara, T
    Naoi, Y
    Kurai, S
    Yamashita, K
    Tottori, S
    Hao, M
    Wada, K
    Nishino, K
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1107 - 1110
  • [10] Quasi-horizontal GaN nanowire array network grown by sublimation sandwich technique
    Jian, J. K.
    Wang, Cong
    Lei, M.
    Zhang, Z. H.
    Wang, T. M.
    Chen, X. L.
    APPLIED SURFACE SCIENCE, 2008, 254 (20) : 6637 - 6641
12345