Electron Transport Through Thiolized Gold Nanoparticles in Single-Electron Transistor

被引:7
|
作者
Gerasimov, Y. S. [2 ]
Shorokhov, V. V. [1 ]
Snigirev, O. V. [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119991, Russia
[2] NRC Kurchatov Inst, Moscow 123182, Russia
关键词
Single-electron transistor; Molecular electronics; Gold nanoparticles; Electronic nanodevices; Discrete energy spectra; Stability diagram;
D O I
10.1007/s10948-014-2661-6
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose an analytical parametric model for defining energy spectra of nanoparticles with a number of atoms of up to 3,300. This allows us to perform Monte-Carlo simulations for single-electron transistor (SET) based on gold nanoparticles with a size of up to 5.2 nm at temperatures from 0.1 to 300 K. At the first step, energy spectra were calculated for isomers of gold nanoparticles, consisting of up to 33 gold atoms using methods of quantum mechanics: density functional theory (DFT) with LANL2DZ basis set for "geometry" optimization; unrestricted Hartree-Fock method (UHF)x with SBKJC basis set to evaluate energy parameters of nanoobjects, which include gold atoms with many electrons. It was found that the general structure of the energy spectra changes unsignificantly if the number of atoms is greater than 27. Moreover, the size of the energy gap and the position of energy levels in it are linear functions of one parameter-the total electric charge of the nanoparticle. These features of energy spectra allowed us to perform calculations of the transport characteristics for a real SET using gold nanoparticle as a central conducting island.
引用
收藏
页码:781 / 786
页数:6
相关论文
共 50 条
  • [21] Transport through a buried double-barrier single-electron transistor at low temperatures
    Inst. fur Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany
    Phys E, 1-4 (502-506):
  • [22] Transport through a buried double-barrier single-electron transistor at low temperatures
    Forster, A
    Griebel, M
    Indlekofer, M
    Luth, H
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 1998, 2 (1-4): : 502 - 506
  • [23] Transport properties of a periodically driven superconducting single-electron transistor
    Romito, Alessandro
    Montangero, Simone
    Fazio, Rosario
    PHYSICAL REVIEW B, 2007, 75 (18):
  • [24] Transport properties of a resistively-coupled single-electron transistor
    Wakaya, F
    Kitamura, K
    Iwabuchi, S
    Gamo, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4B): : 2470 - 2472
  • [25] Interference effects on the transport characteristics of a benzene single-electron transistor
    Darau, D.
    Begemann, G.
    Donarini, A.
    Grifoni, M.
    PHYSICAL REVIEW B, 2009, 79 (23):
  • [26] Influence of nanomechanical properties on single-electron tunneling: A vibrating single-electron transistor
    Boese, D
    Schoeller, H
    EUROPHYSICS LETTERS, 2001, 54 (05): : 668 - 674
  • [27] High-temperature single-electron transistor based on a gold nanoparticle
    Dagesyan, S. A.
    Stepanov, A. S.
    Soldatov, E. S.
    Zharik, G.
    INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2014, 2014, 9440
  • [28] VOLTAGE GAIN IN THE SINGLE-ELECTRON TRANSISTOR
    ZIMMERLI, G
    KAUTZ, RL
    MARTINIS, JM
    APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2616 - 2618
  • [29] Thermopower of a superconducting single-electron transistor
    Turek, M
    Siewert, J
    Richter, K
    PHYSICAL REVIEW B, 2005, 71 (22):
  • [30] Fully Overheated Single-Electron Transistor
    Laakso, M. A.
    Heikkila, T. T.
    Nazarov, Yuli V.
    PHYSICAL REVIEW LETTERS, 2010, 104 (19)