Creation of Solid Immersion Lenses in Bulk Silicon Using Focused Ion Beam Backside Editing Techniques

被引:6
|
作者
Scholz, P. [1 ]
Kerst, U. [1 ]
Bolt, C. [1 ]
Tsao, C. -C. [2 ]
Lundquist, T. [2 ]
机构
[1] Berlin Univ Technol, D-10587 Berlin, Germany
[2] DCG Syst, Fremont, CA 94538 USA
关键词
D O I
10.1361/cp2008istfa157
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This work describes how Solid Immersion Lenses (SILs) can be created in bulk silicon using a focused ion beam and a bitmap milling process. The optical properties are in good agreement with the expected results for the achieved lens geometries. An improvement in lateral spatial resolution by a factor of 1.8 and in image contrast by 170 % for backside analysis is demonstrated. The presented SILs are 32 mu m in diameter with a field of view of about 10 mu m. This process can be an alternative when a regular SIL placement on the chip is impossible or complex. The advantages of this method are the use of a single kind of material (no air gaps and no additional lens material with different n value), the ability to precisely position the SIL on the circuitry and the fact that a SIL may be created in less than twenty minutes of processing time.
引用
收藏
页码:157 / +
页数:2
相关论文
共 50 条
  • [21] Focused ion-beam implanted lateral field-effect transistors on bulk silicon
    Crell, C
    Friedrich, S
    Schreiber, HU
    Wieck, AD
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (09) : 4616 - 4620
  • [22] The fabrication of aspherical microlenses using focused ion-beam techniques
    Langridge, M. T.
    Cox, D. C.
    Webb, R. P.
    Stolojan, V.
    MICRON, 2014, 57 : 56 - 66
  • [23] Investigation of The Local Profiling of The Solid Surfaces Using Focused Ion Beam
    Panchenko, Ivan
    Shandyba, Nikita
    Kolomiytsev, Alexey
    Gromov, Alexandr
    Ageev, Oleg
    STATE-OF-THE ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS (STRANN-2018), 2019, 2064
  • [24] Extended Circuit Edit, Analysis and Trimming Capabilities based on the Backside Focused Ion Beam created Ultra Thin Silicon Platform
    Schlangen, Rudolf
    Leihkauf, Rainer
    Kerst, Uwe
    Boit, Christian
    Egger, Peter
    Lundquist, Ted
    ISTFA 2009, 2009, : 21 - +
  • [25] SILICON FILMS ON INSULATOR FORMATION USING LATERAL SOLID-PHASE EPITAXY INDUCED BY FOCUSED ION-BEAM
    KANEMARU, S
    KANAYAMA, T
    TANOUE, H
    KOMURO, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05): : 2699 - 2702
  • [26] SUBMICROMETER SILICON MOSFETS FABRICATED USING FOCUSED ION-BEAM LITHOGRAPHY
    LEE, JY
    KUBENA, RL
    HAGEN, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 310 - 311
  • [27] SILICON-OXIDE DEPOSITION INTO A HOLE USING A FOCUSED ION-BEAM
    NAKAMURA, H
    KOMANO, H
    NORIMATU, K
    GOMEI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3238 - 3241
  • [28] HRTEM and EELS of nanoantenna structures fabricated using focused ion beam techniques
    Koh, Ai Leen
    Tomanec, Ondrej
    Urbanek, Michal
    Sikola, Tomas
    Maier, Stefan A.
    McComb, David W.
    ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2009 (EMAG 2009), 2010, 241
  • [29] MICROFABRICATION OF AFM TIPS USING FOCUSED ION AND ELECTRON-BEAM TECHNIQUES
    XIMEN, HY
    RUSSELL, PE
    ULTRAMICROSCOPY, 1992, 42 : 1526 - 1532
  • [30] Microstructural analysis of a solid oxide fuel cell anode using focused ion beam techniques coupled with electrochemical simulation
    Shearing, P. R.
    Cai, Q.
    Golbert, J. I.
    Yufit, V.
    Adjiman, C. S.
    Brandon, N. P.
    JOURNAL OF POWER SOURCES, 2010, 195 (15) : 4804 - 4810