A method is presented which allows the study of diameter selective reactions in single-wall carbon nanotubes with an unprecedented accuracy. It is based on the transformation of fullerene peapods into double-wall carbon nanotubes and the study of the resulting diameter distribution of the inner nanotubes with Raman spectroscopy. This yields a spectral resolution increase of about 40 for the modes of different tubes. The method is demonstrated for the diameter selective healing of nanotube defects and yield from C-70 peapod samples. The growth of very small diameter inner tubes from C-70 peapods is demonstrated, which challenges the models of inner nanotube formation. An anomalous absence of middiameter inner tubes is explained by the suppressed amount of C-70 peapods in the transition region between standing and lying C-70 configurations.
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Univ Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Univ Arkansas, Nanotechnol Ctr, Little Rock, AR 72204 USAUniv Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Dervishi, Enkeleda
Li, Zhongrui
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Univ Arkansas, Nanotechnol Ctr, Little Rock, AR 72204 USAUniv Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Li, Zhongrui
Watanabe, Fumiya
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Univ Arkansas, Nanotechnol Ctr, Little Rock, AR 72204 USAUniv Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Watanabe, Fumiya
Xu, Yang
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Univ Arkansas, Nanotechnol Ctr, Little Rock, AR 72204 USAUniv Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Xu, Yang
Saini, Viney
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Univ Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Univ Arkansas, Nanotechnol Ctr, Little Rock, AR 72204 USAUniv Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Saini, Viney
Biris, Alexandru R.
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Natl Inst Res & Dev Isotop & Mol Technol, R-400293 Cluj Napoca, RomaniaUniv Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Biris, Alexandru R.
Biris, Alexandru S.
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Univ Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
Univ Arkansas, Nanotechnol Ctr, Little Rock, AR 72204 USAUniv Arkansas, Dept Appl Sci, Little Rock, AR 72204 USA
机构:
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Kononenko O.V.
Matveev V.N.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Matveev V.N.
Kasumov Y.A.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Kasumov Y.A.
Khodos I.I.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Khodos I.I.
Matveev D.V.
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Institute of Solid State Physics, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Matveev D.V.
Bozhko S.I.
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Institute of Solid State Physics, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Bozhko S.I.
Volkov V.T.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Volkov V.T.
Knyazev M.A.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Knyazev M.A.
Firsov A.A.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka
Firsov A.A.
Il'Yun A.I.
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Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, ChernogolovkaInstitute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka