Deep level transient spectroscopy studies of undoped and Sn-doped AlxGa1-xAs epilayers grown by liquid-phase epitaxy

被引：1
|
作者：
Jothilingam, R [1 ]
Saravanan, S [1 ]
Baskar, K [1 ]
机构：
[1] ANNA UNIV,CTR CRYSTAL GROWTH,MADRAS 600025,TAMIL NADU,INDIA
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1996年 / 15卷 / 13期
关键词：
D O I：
10.1007/BF00539958
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：1132 / 1133
页数：2
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