A CMOS wide-band low-noise amplifier with balun-based noise-canceling technique

被引:19
|
作者
Liao, Youchun [1 ]
Tang, Zhanorwen [1 ]
Min, Hao [1 ]
机构
[1] Fudan Univ, ASIC & Syst State Key Lab, Shanghai 201203, Peoples R China
关键词
D O I
10.1109/ASSCC.2007.4425739
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A differential high linearity low-noise amplifier (LNA) based on a capacitor-cross-coupled topology is presented in this paper. An off-chip balun is used for providing DC-bias and canceling the channel thermal noise of the transconductance MOS transistors. The LNA uses NMOS load and provides an extra signal feed-forward and noise-canceling path. Analysis shows that the noise contribution of the transconductance MOST is only gamma/20 and the noise figure (NF) of the proposed LNA is 1 + 0.2 gamma. The chip is implemented in a 0.18-mu m MMRF CMOS process. Measured results show that in 50M-860MHz frequency range, the LNA achieved 15 dB gain, 2.5 dB NF, 8.3 dBm IIP3 and consumes only 4 mA current from a 1.8-V supply.
引用
收藏
页码:91 / 94
页数:4
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