A wide-band 0.5 μm CMOS low-noise amplifier

被引：0
|
作者：
Lo, I [1 ]
Derek, AY [1 ]
Cheung, K [1 ]
Lubecke, VM [1 ]
Boric-Lubecke, O [1 ]
机构：
[1] Univ Hawaii, Dept Elect Engn, Honolulu, HI 96822 USA
来源：
2005 IEEE/ACES International Conference on Wireless Communications and Applied Computational Electromagnetics | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wide-band low-noise amplifier designed in 0.5 mu m CMOS process will be discussed in this paper. Simulation results show that this low-noise amplifier is able to achieve a very wide bandwidth from 70 MHz to 1.6 GHz, with the maximum gain of 12.4 dB, and NF below 2 dB. In addition, compared to other known CMOS wide-band topologies, this low-noise amplifier has a better linearity with its 1 dB compression point at 0.5 dBm.
引用
收藏
页码：771 / 774
页数：4
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