Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon

被引：21
|
作者：
Yang, Jun [1 ]
Bhattacharya, Pallab [1 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
来源：
OPTICS EXPRESS | 2008年 / 16卷 / 07期
关键词：
D O I：
10.1364/OE.16.005136
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a: Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of similar to 10 dB/cm at a wavelength of 1.05 mu m. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 mu m-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets. (C) 2008 Optical Society of America.
引用
收藏
页码：5136 / 5140
页数：5
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