Integration of epitaxially-grown InGaAs/GaAs quantum dot lasers with hydrogenated amorphous silicon waveguides on silicon

The monolithic integration of epitaxially-grown InGaAs/GaAs self-organized quantum dot lasers with hydrogenated amorphous silicon (a: Si-H) waveguides on silicon substrates is demonstrated. Hydrogenated amorphous silicon waveguides, formed by plasma-enhanced-chemical-vapor deposition (PECVD), exhibit a propagation loss of similar to 10 dB/cm at a wavelength of 1.05 mu m. The laser-waveguide coupling, with coupling coefficient of 22%, is achieved through a 3.2 mu m-width groove etched by focused-ion-beam (FIB) milling which creates high-quality etched GaAs facets. (C) 2008 Optical Society of America.