New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

被引：0
|
作者：
Han, Kijeong [1 ]
Kanale, Ajit [1 ]
Baliga, B. J. [1 ]
Ballard, Bahji [1 ]
Morgan, Adam [1 ]
Hopkins, Douglas C. [1 ]
机构：
[1] North Carolina State Univ, PowerAmer Inst, Raleigh, NC 27695 USA
来源：
2018 IEEE 6TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2018年
关键词：
Silicon Carbide; 4H-SiC; MOSFET; JBSFET; Short Circuit; Ruggedness; Robustness; Reliability; Failure Mechanism; RUGGEDNESS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and analyzed. Due to the lower saturated drain current, the JBSFETs were found to have superior SC-SOA compared with MOSFETs despite the integrated Schottky contact. A new short circuit failure mechanism related to melting of the top Al metallization is proposed based up on nonisothermal TCAD numerical simulations supported with SEM measurements of failed die using Energy Dispersive X-ray Spectroscopy (EDS) analysis.
引用
收藏
页码：108 / 113
页数：6
相关论文
共 50 条
  • [21] Design and Experimental Study of 1.2kV 4H-SiC Merged PiN Schottky Diode
    Wu, Jiupeng
    Ren, Na
    Sheng, Kuang
    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 203 - 206
  • [22] Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation
    Kim, Dongyoung
    Sung, Woongje
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (12) : 1822 - 1825
  • [23] Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS
    Zhang, Yourun
    Ou, Yanggang
    Yang, Xiao
    Chen, Hang
    Luo, Maojiu
    Zhang, Bo
    Bai, Song
    Niu, Yingxi
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6313 - 6320
  • [24] Unique short-circuit failure mechanisms in 1.2-kV SiC planar MOSFETs
    Suzuki, Kazuhiro
    Kashimura, Kaito
    Yano, Hiroshi
    Iwamuro, Noriyuki
    Applied Physics Express, 2024, 17 (12)
  • [25] A Static, Switching, Short-circuit Characteristics of 1.2 kV 4H-SiC MOSFETs: Comparison between Linear and (Bridged) Hexagonal Topology
    Kim, Dongyoung
    Yun, Nick
    DeBoer, Skylar
    Morgan, Adam J.
    Jang, Seung Yup
    Sung, Woongje
    Fan, Junchong
    Yu, Susanna
    Kang, Minseok
    Agarwal, Anant K.
    2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2021, : 9 - 13
  • [26] Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-kV SiC JBS-Integrated MOSFETs
    Zhang, Yourun
    Yang, Xiao
    Chen, Hang
    Li, Kunlin
    Zhong, Wei
    Luo, Maojiu
    Luo, Jiamin
    Zhang, Bo
    Bai, Song
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) : 4027 - 4032
  • [27] Temperature Dependence of 1.2kV 4H-SiC Schottky Barrier Diode for Wide Temperature Applications
    Qi, Jinwei
    Yang, Xu
    Li, Xin
    Tian, Kai
    Wang, Menghua
    Guo, Shuwen
    Yang, Mingchao
    2019 IEEE 10TH INTERNATIONAL SYMPOSIUM ON POWER ELECTRONICS FOR DISTRIBUTED GENERATION SYSTEMS (PEDG 2019), 2019, : 822 - 826
  • [28] Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results
    Han, Kijeong
    Agarwal, Aditi
    Baliga, B. Jayant
    2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 159 - 162
  • [29] 4H-SiC/SiO2 Interface Degradation in 1.2 kV 4H-SiC MOSFETs Due to Power Cycling Tests
    Yoo, Dahui
    Kim, Mijin
    Kang, Inho
    Lee, Ho-Jun
    ELECTRONICS, 2024, 13 (07)
  • [30] Influence of P+ Body on Performance and Ruggedness of 1.2 kV 4H-SiC MOSFETs
    Kim, Dongyoung
    Jang, Seung Yup
    Morgan, Adam J.
    Sung, Woongje
    IEEE Transactions on Electron Devices, 2024, 71 (12) : 7659 - 7665
12345