Silicon membrane resonant-cavity-enhanced photodetector

被引：9

作者：

Cheng, BW ^{[1
]}

Li, CB ^{[1
]}

Yao, F ^{[1
]}

Xue, CL ^{[1
]}

Zhang, JG ^{[1
]}

Mao, RW ^{[1
]}

Zuo, YH ^{[1
]}

Luo, LP ^{[1
]}

Wang, QM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 06期

基金：

国家高技术研究发展计划(863计划);

关键词：

D O I：

10.1063/1.2009822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Si resonant-cavity-enhanced (RCE) photodiode was fabricated on a silicon membrane. The Si membrane was formed by etching from the back side of the silicon-on-insulator substrate with the buried SiO2 layer as etch-stop layer. A gold layer was deposited serving as an electrode layer and bottom mirror of the RCE photodiode. The photodiode had an external quantum efficiency of 33.8% at the resonant wavelength of 848 nm and a full width at half maximum (FWHM) of 17 nm. The responsivity was 4.6 times that of a conventional Si p-i-n photodiode with the same absorption layer thickness. (c) 2005 American Institute of Physics.

引用

页数：3

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