Si-based resonant-cavity-enhanced photodetector

被引：4
|
作者：
Wang, QM [1 ]
Li, C [1 ]
Cheng, BW [1 ]
Yang, QQ [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
OPTICAL ENGINEERING | 2001年 / 40卷 / 07期
基金：
中国国家自然科学基金;
关键词：
RCE photodetector; SlGe/Si; SIMOX; Bragg reflector; top-illumination; bottom-illumination; responsivity spectra;
D O I：
10.1117/1.1371542
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) resonant-cavity-enhanced (RCE) photodetector fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300 nm. The buried oxygen layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5 V is measured 10.2 mA/W at 1285 nm, a full width at half maximum of 25 nm for the top-illumination RCE photodetector, 19 mA/W at 1305 nm, and a full width at half maximum of 14 nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305 nm, with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one. (C) 2001 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码：1192 / 1194
页数：3
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