Spin torque in semiconductor single planar tunnel junctions

被引：1
|
作者：
Wilczynski, M. [1 ]
Barnas, J. [2 ,3 ]
Swirkowicz, R. [1 ]
机构：
[1] Warsaw Univ Technol, Fac Phys, PL-00662 Warsaw, Poland
[2] Adam Mickiewicz Univ Poznan, Dept Phys, PL-61614 Poznan, Poland
[3] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
来源：
ACTA PHYSICA POLONICA A | 2008年 / 113卷 / 01期
关键词：
D O I：
10.12693/APhysPolA.113.35
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Transport in a single planar tunnel junction with electrodes made of a ferromagnetic semiconductor is analyzed theoretically in the zero-temperature limit. Tunneling current and both (in-plane and out-of-plane) components of the spin torque exerted on one of the ferromagnetic electrodes are determined as a function of the angle theta between magnetic moments of the electrodes. The influence of the bias voltage and spin splitting of the electron band (in both electrodes) on the spin torque components is analyzed numerically.
引用
收藏
页码：35 / 38
页数：4
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