Voltage Balancing of Series IGBTs in Short-Circuit Conditions

被引:2
|
作者
Zarghani, Mostafa [1 ]
Peyghami, Saeed [2 ]
Iannuzzo, Francesco [2 ]
Blaabjerg, Frede [2 ]
Kaboli, Shahriyar [1 ]
机构
[1] Sharif Univ Technol, Dept Elect Engn, Tehran 1458889694, Iran
[2] Aalborg Univ, Dept Energy Technol, DK-9220 Aalborg, Denmark
关键词
Insulated gate bipolar transistors; Short-circuit currents; Voltage; Snubbers; Clamps; Circuit faults; Aging; Clamp mode snubber; series insulated gate bipolar transistors (IGBTs); short-circuit fault; voltage balancing; PROTECTION; SWITCH; FAULT;
D O I
10.1109/TPEL.2021.3132456
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article proposes a scheme for balancing the voltage of series-connected insulated gate bipolar transistors (IGBTs), which is also very effective under short-circuit conditions. An optimized clamp-mode snubber is proposed, including an active-driver to balance the currents of the IGBTs during short-circuit, which in turn allows for a considerable reduction of the snubber capacitance. The approach is proven to be effective under short-circuit conditions by a maximum of 55 V voltage increment and a negligible difference in the current values. The effectiveness of the proposed approach is demonstrated through simulations in PSPICE software and experimental tests performed at 2 kV.
引用
收藏
页码:5675 / 5686
页数:12
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