REACTIVELY SPUTTERED MoO3 THIN FILMS AND TEMPERATURE DEPENDENCE OF ELECTRICAL PROPERTIES OF AN Ag/MoO3/n-Si DIODE

被引：0

作者：

Cebisli, G. ^{[1
]}

Asubay, S. ^{[2
]}

Ocak, Y. S. ^{[3
,4
]}

机构：

[1] Dicle Univ, Inst Nat & Appl Sci, Dept Phys, TR-21280 Diyarbakir, Turkey

[2] Dicle Univ, Fac Sci, Dept Phys, TR-21280 Diyarbakir, Turkey

[3] Dicle Univ, Fac Educ, Dept Sci, TR-21280 Diyarbakir, Turkey

[4] Dicle Univ, Smart Lab, TR-21280 Diyarbakir, Turkey

来源：

JOURNAL OF OVONIC RESEARCH | 2018年 / 14卷 / 06期

关键词：

MoO3; Reactive sputter; Thin film; Heterojunction; GAS-SENSING PROPERTIES;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

MoO3 thin films were deposited onto n-Si and soda lime glass substrates by the reactive sputtering method. The influence of reactive gas flows on the morphological, structural and optical properties of thin films were analyzed by Atomic Force Microscopy (AFM), X-ray Diffraction (XRD) system and UV-Vis data. It was seen that the homogeneity and amorphousness of the films increase with the O-2 ratio. In addition, the Ag/MoO3/n-Si structure was obtained by evaporation of Ag on MoO3/n-Si structure. It was seen that the device had excellent rectification. The electrical properties of Ag/MoO3/n-Si structure were analyzed by current-voltage (I-V) measurements in the dark between 77 and 500 K. It was reported that the temperature had a strong influence on the electrical parameters of the device.

引用

页码：405 / 414

页数：10

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