Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

被引：14
|
作者：
Chaussende, D [1 ]
Ferro, G
Monteil, Y
机构：
[1] Univ Lyon 1, UMR 5615, Lab Multimat & Interfaces, F-69622 Villeurbanne, France
[2] NOV ASiC, F-73600 Moutiers, France
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 01期
关键词：
vapour-liquid-sofid mechanism; liquid phase epitaxy; vapor phase epitaxy; silicon carbide;
D O I：
10.1016/S0022-0248(01)01651-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In order to reach fast growth regime, we have investigated the SiC homoepitaxial growth on off-axis 4H-SiC substrates from a vapour-liquid-solid (VLS) mechanism in a vertical cold wall CVD reactor. The experiments involved silane and propane diluted in hydrogen as feeding vapour phase and melted silicon as "liquid catalyst". Growth rates up to 25 mum/h at 1500 degreesC and 35 mum/h at 1600 degreesC with a bunched step-terrace structure are demonstrated in such a system. The formation and stability of the VLS equilibrium is discussed with respect to the experimental parameters and a first approach of the mechanism is proposed. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：63 / 69
页数：7
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