Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

被引：14

作者：

Chaussende, D ^{[1
]}

Ferro, G

Monteil, Y

机构：

[1] Univ Lyon 1, UMR 5615, Lab Multimat & Interfaces, F-69622 Villeurbanne, France

[2] NOV ASiC, F-73600 Moutiers, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 01期

关键词：

vapour-liquid-sofid mechanism; liquid phase epitaxy; vapor phase epitaxy; silicon carbide;

D O I：

10.1016/S0022-0248(01)01651-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In order to reach fast growth regime, we have investigated the SiC homoepitaxial growth on off-axis 4H-SiC substrates from a vapour-liquid-solid (VLS) mechanism in a vertical cold wall CVD reactor. The experiments involved silane and propane diluted in hydrogen as feeding vapour phase and melted silicon as "liquid catalyst". Growth rates up to 25 mum/h at 1500 degreesC and 35 mum/h at 1600 degreesC with a bunched step-terrace structure are demonstrated in such a system. The formation and stability of the VLS equilibrium is discussed with respect to the experimental parameters and a first approach of the mechanism is proposed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：63 / 69

页数：7

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