Gain-Switched Operation of Ultrafast Laser Inscribed Waveguides in Cr:ZnSe

被引:5
|
作者
McDaniel, Sean A. [1 ]
Berry, Patrick A. [2 ]
Schepler, Kenneth L. [3 ]
Macdonald, John R. [4 ]
Beecher, Stephen J. [5 ]
Kar, Ajoy K. [4 ]
机构
[1] Leidos Inc, Beavercreek, OH 45431 USA
[2] Air Force Res Lab, Sensors Directorate, Wright Patterson AFB, OH 45433 USA
[3] Univ Cent Florida, Coll Opt & Photon, CREOL, Orlando, FL 32816 USA
[4] Heriot Watt Univ, Inst Photon & Quantum Sci, Edinburgh EH14 4A5, Midlothian, Scotland
[5] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
关键词
solid-state lasers; mid-IR lasers; transition-metal lasers; ZINC CHALCOGENIDES; EFFICIENT; CR2+-ZNS; POWER;
D O I
10.1117/12.2079396
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the first demonstration of a gain-switched chromium-doped zinc selenide channel waveguide laser. The guided-wave structure was produced by ultrafast laser inscription and exhibited output pulse energies up to 12 mu J. The laser exhibited narrow spectral output with a linewidth less than 1 nm. The beam quality was measured to be M-2 <= 7 with a highly multimode output profile. The laser had a maximum slope efficiency of 9.8% and no deleterious thermal effects were observed up to an average pump power of 3.3 W.
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页数:8
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