The influence of electron track lengths on the γ-ray response of compound semiconductor detectors

被引：2
|
作者：
Nakhostin, M. [1 ]
Esmaili-Torshabi, A. [2 ]
机构：
[1] Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England
[2] Kerman Univ Technol, Dept Elect & Comp Engn, Kerman, Iran
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2015年 / 797卷
关键词：
Compound semiconductor detectors; Charge-trapping effect; Gamma spectroscopy; CHARGE; CDTE;
D O I：
10.1016/j.nima.2015.07.006
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The charge trapping effect in compound semiconductor gamma-ray detectors in the presence of a uniform electric held is commonly described by Hecht's relation. However, Hecht's relation ignores the geometrical spread of charge carriers caused by the finite range of primary and secondary electrons (6-rays) in the detector. In this paper, a method based on the Shockley-Ramo theorem is developed to calculate 7-ray induced charge pulses by taking into account the charge-trapping effect associated with the geometrical spread of charge carriers. The method is then used to calculate the response of a planar CdTe detector to energetic gamma-rays by which the influence of electron track lengths on the y-ray response of the detectors is clearly shown. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：255 / 259
页数：5
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