Deep learning acceleration based on in-memory computing

被引:23
|
作者
Eleftheriou, E. [1 ]
Le Gallo, M. [1 ]
Nandakumar, S. R. [1 ]
Piveteau, C. [1 ]
Boybat, I [1 ]
Joshi, V [1 ]
Khaddam-Aljameh, R. [1 ]
Dazzi, M. [1 ]
Giannopoulos, I [1 ]
Karunaratne, G. [1 ]
Kersting, B. [1 ]
Stanisavljevic, M. [1 ]
Jonnalagadda, V. P. [1 ]
Ioannou, N. [1 ]
Kourtis, K. [1 ]
Francese, P. A. [1 ]
Sebastian, A. [1 ]
机构
[1] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland
关键词
PHASE-CHANGE MEMORY; NETWORK;
D O I
10.1147/JRD.2019.2947008
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Performing computations on conventional von Neumann computing systems results in a significant amount of data being moved back and forth between the physically separated memory and processing units. This costs time and energy, and constitutes an inherent performance bottleneck. In-memory computing is a novel non-von Neumann approach, where certain computational tasks are performed in the memory itself. This is enabled by the physical attributes and state dynamics of memory devices, in particular, resistance-based nonvolatile memory technology. Several computational tasks such as logical operations, arithmetic operations, and even certain machine learning tasks can be implemented in such a computational memory unit. In this article, we first introduce the general notion of in-memory computing and then focus on mixed-precision deep learning training with in-memory computing. The efficacy of this new approach will be demonstrated by training the MNIST multilayer perceptron network achieving high accuracy. Moreover, we show how the precision of in-memory computing can be further improved through architectural and device-level innovations. Finally, we present system aspects, such as high-level system architecture, including core-to-core interconnect technologies, and high-level ideas and concepts of the software stack.
引用
收藏
页数:18
相关论文
共 50 条
  • [31] SIAM: Chiplet-based Scalable In-Memory Acceleration with Mesh for Deep Neural Networks
    Krishnan, Gokul
    Mandal, Sumit K.
    Pannala, Manvitha
    Chakrabarti, Chaitali
    Seo, Jae-Sun
    Ogras, Umit Y.
    Cao, Yu
    [J]. ACM TRANSACTIONS ON EMBEDDED COMPUTING SYSTEMS, 2021, 20 (05)
  • [32] PRIVE: Efficient RRAM Programming with Chip Verification for RRAM-based In-Memory Computing Acceleration
    He, Wangxin
    Meng, Jian
    Gonugondla, Sujan Kumar
    Yu, Shimeng
    Shanbhag, Naresh R.
    Seo, Jae-sun
    [J]. 2023 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION, DATE, 2023,
  • [33] AIDA: Associative In-Memory Deep Learning Accelerator
    Garzon, Esteban
    Teman, Adam
    Lanuzza, Marco
    Yavits, Leonid
    [J]. IEEE MICRO, 2022, 42 (06) : 67 - 75
  • [34] A review of in-memory computing for machine learning: architectures, options
    Snasel, Vaclav
    Dang, Tran Khanh
    Kueng, Josef
    Kong, Lingping
    [J]. INTERNATIONAL JOURNAL OF WEB INFORMATION SYSTEMS, 2024, 20 (01) : 24 - 47
  • [35] Scalable In-Memory Computing
    Uta, Alexandru
    Sandu, Andreea
    Costache, Stefania
    Kielmann, Thilo
    [J]. 2015 15TH IEEE/ACM INTERNATIONAL SYMPOSIUM ON CLUSTER, CLOUD AND GRID COMPUTING, 2015, : 805 - 810
  • [36] Hyperspectral In-Memory Computing
    Latifpour, Mostafa Honari
    Park, Byoung Jun
    Yamamoto, Yoshihisa
    Suh, Myoung-Gyun
    [J]. 2024 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC, 2024,
  • [37] Computing In-Memory, Revisited
    Milojicic, Dejan
    Bresniker, Kirk
    Campbell, Gary
    Faraboschi, Paolo
    Strachan, John Paul
    Williams, Stan
    [J]. 2018 IEEE 38TH INTERNATIONAL CONFERENCE ON DISTRIBUTED COMPUTING SYSTEMS (ICDCS), 2018, : 1300 - 1309
  • [38] In-memory computing with ferroelectrics
    Rui Yang
    [J]. Nature Electronics, 2020, 3 : 237 - 238
  • [39] In-memory mechanical computing
    Tie Mei
    Chang Qing Chen
    [J]. Nature Communications, 14
  • [40] In-memory hyperdimensional computing
    Karunaratne, Geethan
    Le Gallo, Manuel
    Cherubini, Giovanni
    Benini, Luca
    Rahimi, Abbas
    Sebastian, Abu
    [J]. NATURE ELECTRONICS, 2020, 3 (06) : 327 - +