Optical Spectroscopy of polytypic quantum wells in SiC

被引：0

作者：

Samson, G ^{[1
]}

Chen, L ^{[1
]}

Skromme, BJ ^{[1
]}

Wang, R ^{[1
]}

Li, C ^{[1
]}

Bhat, I ^{[1
]}

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Optical characterization is used to study spontaneously formed polytypic quantum well structures in lightly doped epilayers on heavily doped ([N] > 3x10(19) cm(-3)) 4H-SiC substrates. Low temperature (1.8 K) photoluminescence (PL) shows emission from the wells in both epilayer and substrate, the latter occurring at higher energy. A self-consistent model of the quantum wells including polarization charge is used to explain the results. Raman. scattering data provide direct evidence of depletion of the 4H barriers in the substrate due to modulation doping into these wells.

引用

页码：989 / 990

页数：2

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