A Monolithic Integration of a Tunable MEMS Capacitor with GaN Technology

被引：0

作者：

Zine-El-Abidine, Imed ^{[1
]}

Dietrich, James ^{[2
]}

机构：

[1] CMC Microsyst, Micro Nanotechnol Fabricat, Kingston, ON, Canada

[2] Univ Manitoba, Winnipeg, MB R3T 2N2, Canada

来源：

2011 24TH CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (CCECE) | 2011年

关键词：

GaN; microelectromechanical systems; RF MEMS; tunable capacitor;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper demonstrates a monolithic integration of MEMS tunable capacitor fabricated using CPFC GaN800 technology. The MEMS capacitor is based on a parallel-plate configuration with electrostatic actuation. A tuning range of 60% was achieved at 5 GHz and the resonant frequency was above 20 GHz.

引用

页码：447 / 449

页数：3

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