Photopeak detection by an InSb radiation detector made of liquid phase epitaxially grown crystals

被引：10
|
作者：
Sato, Yuki [1 ]
Morita, Yasunari [1 ]
Harai, Tomoyuki [1 ]
Kanno, Ikuo [1 ]
机构：
[1] Kyoto Univ, Grad Sch Engn, Sakyo Ku, Kyoto 6068501, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 621卷 / 1-3期
关键词：
InSb; Radiation detector; Liquid phase epitaxy; SURFACE-MORPHOLOGY; SCHOTTKY;
D O I：
10.1016/j.nima.2010.05.004
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have fabricated a radiation detector using a p-type InSb crystal grown by liquid phase epitaxy (LPE). At temperatures below 100 K, the resistivity of the LPE crystal was over an order of magnitude higher than that of the commercial InSb crystal substrate. The resistance of the InSb detector is 680 k Omega at 4.2 K, which is one order of magnitude higher than that of detectors fabricated from commercial InSb wafers and, in an improvement over previous results, the energy resolution of Am-241 alpha particles reaches 3%. In addition, we also observe the photopeak of gamma-rays emitted by Ba-133. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：383 / 386
页数：4
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