Comparison of operation characteristic in radiation detectors made of InSb crystals grown by various methods

被引:0
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作者
Sato Y. [1 ]
Harai T. [1 ]
Kanno I. [1 ]
机构
[1] Graduate School of Engineering, Kyoto University, Kyoto
来源
关键词
InSb; Radiation detector; X-ray fluorescence analysis; Zone melting method;
D O I
10.1007/978-4-431-53910-0_37
中图分类号
学科分类号
摘要
We grew InSb crystal by the zone melting (ZM) method, and fabricated a Schottky-type radiation detector with the ZM grown InSb crystal. The energy peak of 5.5 MeV alpha particles of 241Am was observed for the first time by using the ZM grown InSb crystal. In addition, the comparisons of response characteristics with the ones of previously fabricated detectors made of InSb crystals grown by liquid phase epitaxy method and Czochralski method for 5.5 MeV alpha particles are described. © Springer 2011.
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页码:278 / 285
页数:7
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