Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

被引：6

作者：

Kim, Donghyun ^{[1
,2
]}

Jeong, Jaewook ^{[1
,2
]}

Im, Hwarim ^{[1
,2
]}

Ahn, Sungmo ^{[2
,3
]}

Jeon, Heonsu ^{[2
,3
]}

Lee, Changhee ^{[1
,2
]}

Hong, Yongtaek ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 11期

关键词：

Vertical organic field effect transistors; Organic thin film transistors; Laser holography; STATIC INDUCTION TRANSISTORS; LITHOGRAPHY; LAYER;

D O I：

10.1016/j.orgel.2011.07.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertical organic field-effect transistors (VOFETs) with nanoscale channel openings have been fabricated using pentacene as an active layer material. To achieve uniform nanoscale two-dimensional channel openings, a laser holography lithography has been introduced. Uniformly distributed and well-aligned holes with 250 nm diameter were successfully obtained with the laser holography lithography. VOFET devices with these channel openings have shown high on/off ratio of about 10(3) without any further treatment. Gate leakage current was also decreased with an additional insulating layer generated on the gate electrode sidewall via plasma oxidation. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1841 / 1845

页数：5

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