Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current

被引：6

作者：

Kim, Donghyun ^{[1
,2
]}

Jeong, Jaewook ^{[1
,2
]}

Im, Hwarim ^{[1
,2
]}

Ahn, Sungmo ^{[2
,3
]}

Jeon, Heonsu ^{[2
,3
]}

Lee, Changhee ^{[1
,2
]}

Hong, Yongtaek ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect Engn & Comp Sci, Seoul 151744, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 11期

关键词：

Vertical organic field effect transistors; Organic thin film transistors; Laser holography; STATIC INDUCTION TRANSISTORS; LITHOGRAPHY; LAYER;

D O I：

10.1016/j.orgel.2011.07.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Vertical organic field-effect transistors (VOFETs) with nanoscale channel openings have been fabricated using pentacene as an active layer material. To achieve uniform nanoscale two-dimensional channel openings, a laser holography lithography has been introduced. Uniformly distributed and well-aligned holes with 250 nm diameter were successfully obtained with the laser holography lithography. VOFET devices with these channel openings have shown high on/off ratio of about 10(3) without any further treatment. Gate leakage current was also decreased with an additional insulating layer generated on the gate electrode sidewall via plasma oxidation. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1841 / 1845

页数：5

共 50 条

[1] Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors
Goryll, M
Moers, J
Trellenkamp, S
Vescan, L
Marso, M
Kordos, P
Lüth, H
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 18 - 22
[2] Channel formation in organic field-effect transistors
Li, T
Balk, JW
Ruden, PP
Campbell, IH
Smith, DL
JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) : 4312 - 4318
[3] Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors
de Boer, RWI
Iosad, NN
Stassen, AF
Klapwijk, TM
Morpurgo, AF
APPLIED PHYSICS LETTERS, 2005, 86 (03) : 1 - 3
[4] Energy distribution of channel electrons and its impacts on the gate leakage current in graphene field-effect transistors
Mao, Ling-Feng
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 98 (03): : 565 - 569
[5] Energy distribution of channel electrons and its impacts on the gate leakage current in graphene field-effect transistors
Ling-Feng Mao
Applied Physics A, 2010, 98 : 565 - 569
[6] Nanoscale n-channel and ambipolar organic field-effect transistors
Jung, TH
Yoo, B
Wang, L
Dodabalapur, A
Jones, BA
Facchetti, A
Wasielewski, MR
Marks, TJ
APPLIED PHYSICS LETTERS, 2006, 88 (18)
[7] Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
Miller, EJ
Dang, XZ
Yu, ET
JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) : 5951 - 5958
[8] EXCESS GATE-LEAKAGE CURRENT OF INGAAS JUNCTION FIELD-EFFECT TRANSISTORS
OHNAKA, K
SHIBATA, J
JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) : 4714 - 4717
[9] Conductance quantization in nanoscale vertical structure silicon field-effect transistors with a wrap gate
Nishiguchi, K
Oda, S
APPLIED PHYSICS LETTERS, 2000, 76 (20) : 2922 - 2924
[10] Mica, a Potential Two-Dimensional-Crystal Gate Insulator for Organic Field-Effect Transistors
He, Yudong
Dong, Huanli
Meng, Qing
Jiang, Lang
Shao, Wei
He, Liangfu
Hu, Wenping
ADVANCED MATERIALS, 2011, 23 (46) : 5502 - +

← 1 2 3 4 5 →