Thermoelectric properties of semiconducting Bi-rich Bi-Sb alloys

被引：7

作者：

Kitagawa, H ^{[1
]}

Noguchi, H ^{[1
]}

Itoh, M ^{[1
]}

Noda, Y ^{[1
]}

机构：

[1] Shimane Univ, Dept Mat Sci, Matsue, Shimane 6908504, Japan

来源：

TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年

关键词：

D O I：

10.1109/ICT.2003.1287506

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Bi100-xSbx (x=8similar to17) alloys were prepared by direct melting of constituent elements, which was followed by quenching and annealing. The semiconducting and thermoelectric properties of the samples were investigated by measuring Hall coefficient, electrical resistivity and Seebeck coefficient in the temperature range from 20 to 300K. The properties change gradually with the Sb concentration x, which is attributed to the variation of the energy gap. In all samples, the electrical resistivity decreases with increasing temperature and the absolute value of the Seebeck coefficient takes a maximum value around 70K. The large power factor was resulted in the temperature range from 100 to 200K. The Hall mobility was enhanced by annealing, which leads to a small electrical resistivity and a large Seebeck coefficient. Consequently, a large power factor about 8.5W/mK(2) was obtained in the annealed Bi88Sb12 alloy.

引用

页码：290 / 293

页数：4

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