A transferable nonorthogonal tight-binding scheme for germanium

被引:21
|
作者
Menon, M [1 ]
机构
[1] Univ Kentucky, Dept Phys & Astron, Lexington, KY 40506 USA
[2] Univ Kentucky, Ctr Computat Sci, Lexington, KY 40506 USA
关键词
D O I
10.1088/0953-8984/10/48/019
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A minimal-parameter tight-binding theory incorporating explicit use of nonorthogonality of the basis is used to generate a transferable scheme for germanium. Good results are obtained for high-pressure bulk phases and vibrational frequencies. Diamond structure is found to be the ground state even when compared with the clathrate structure. The results for clusters show good agreement with ab initio predictions.
引用
收藏
页码:10991 / 10998
页数:8
相关论文
共 50 条
  • [41] TIGHT-BINDING TOTAL ENERGY MODELS FOR SILICON AND GERMANIUM
    MERCER, JL
    CHOU, MY
    PHYSICAL REVIEW B, 1993, 47 (15): : 9366 - 9376
  • [42] Tight-binding scheme for impurity states in semiconductors
    Menchero, JG
    Capaz, RB
    Koiller, B
    Chacham, H
    PHYSICAL REVIEW B, 1999, 59 (04): : 2722 - 2725
  • [43] THEORY OF IMPURITY CALCULATION IN A TIGHT-BINDING SCHEME
    MORETTI, P
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1983, 2 (03): : 711 - 720
  • [44] Accurate and transferable extended Huckel-type tight-binding parameters
    Cerdá, J
    Soria, F
    PHYSICAL REVIEW B, 2000, 61 (12): : 7965 - 7971
  • [45] Simulation structural properties of Ni clusters by transferable tight-binding potential
    Luo, CL
    Cao, AJ
    Zhou, YH
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 1999, 15 (04) : 320 - 322
  • [46] Simulation Structural Properties of Ni Clusters by Transferable Tight-binding Potential
    Chenglin LUO
    Aijuan CAO and Yanhuai ZHOU(Department of Physics
    Journal of Materials Science & Technology, 1999, (04) : 320 - 322
  • [47] TRANSFERABLE TIGHT-BINDING POTENTIAL FOR REACTIVE SYSTEMS IN CONDENSED-PHASE
    YANG, W
    MAK, CH
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 208 : 371 - PHYS
  • [48] Energetic, vibrational, and electronic properties of silicon using a nonorthogonal tight-binding model
    Bernstein, N
    Mehl, MJ
    Papaconstantopoulos, DA
    Papanicolaou, NI
    Bazant, MZ
    Kaxiras, E
    PHYSICAL REVIEW B, 2000, 62 (07): : 4477 - 4487
  • [49] Nonorthogonal tight-binding model with H-C-N-O parameterisation
    Maslov, Mikhail M.
    Podlivaev, Alexei I.
    Katin, Konstantin P.
    MOLECULAR SIMULATION, 2016, 42 (04) : 305 - 311
  • [50] TIGHT-BINDING MODEL AND INTERACTIONS SCALING LAWS FOR SILICON AND GERMANIUM
    GROSSO, G
    PIERMAROCCHI, C
    PHYSICAL REVIEW B, 1995, 51 (23): : 16772 - 16777