Zinc oxide films deposited on FTO substrate by hydrothermal microwave-assisted method

被引：0
|
作者：
de Souza, Graziela [1 ]
Nery, Luis Henrique [1 ]
Malafatti, Joao Otavio D. [2 ]
Dias, Jeferson Almeida [3 ]
Paris, Elaine Cristina [2 ]
Klein-Gunnewiek, Rodolfo Foster [4 ]
Giraldi, Tania Regina [1 ]
机构：
[1] Univ Fed Alfenas UNIFAL, Rodovia Jose Aurelio Vilela 11-999, BR-37715400 Pocos De Caldas, MG, Brazil
[2] Embrapa Instrumentacao Agr, Nanotechnol Natl Lab Agr LNNA, Rua XV Novembro 1452, BR-13560970 Sao Carlos, SP, Brazil
[3] Univ Fed Lavras UFLA, Inst Ciencia Tecnol & Nova ICTIN, BR-37950000 Sao Sebastiao Do Paraiso, MG, Brazil
[4] Univ Fed Sao Carlos, Rodovia Washington Luis,Km 235, BR-13565905 Sao Carlos, SP, Brazil
来源：
MRS COMMUNICATIONS | 2022年 / 12卷 / 04期
关键词：
Film; Hydrothermal; Microwave heating; Nanostructure; Semiconducting;
D O I：
10.1557/s43579-022-00189-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study aimed to prepare nanostructured ZnO films deposited on FTO substrate by microwave-hydrothermal method. The effects of synthesis time and post-synthesis heat treatment were assessed. ZnO films exhibited a wurtzite structure and a band gap in the range of 3.2 to 3.4 eV. Microwave time influenced film morphology, which varied from lamellar structures (10 min of microwave exposure) to spherical particles (30 min of microwave exposure). Post-synthesis heat treatment removed synthesis residues, increasing film purity and resulting in spherical particles with porous surfaces. These characteristics enhanced the photocatalytic properties of films for degradation of rhodamine B. The findings of this study underscore the importance of microwave conditions in the synthesis of ZnO films with semiconductor properties.
引用
收藏
页码：409 / 414
页数：6
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