Dislocation climb in two-dimensional discrete dislocation dynamics

被引：56

作者：

Davoudi, Kamyar M. ^{[1
]}

Nicola, Lucia ^{[2
]}

Vlassak, Joost J. ^{[1
]}

机构：

[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Delft Univ Technol, Dept Mat Sci & Engn, NL-2628 CD Delft, Netherlands

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 10期

基金：

美国国家科学基金会;

关键词：

FREESTANDING THIN-FILMS; PLASTIC-DEFORMATION; BULK DIFFUSION; SIMULATIONS; CREEP; CRYSTALS; STRENGTH; STRESS; LENGTH;

D O I：

10.1063/1.4718432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this paper, dislocation climb is incorporated in a two-dimensional discrete dislocation dynamics model. Calculations are carried out for polycrystalline thin films, passivated on one or both surfaces. Climb allows dislocations to escape from dislocation pile-ups and reduces the strain-hardening rate, especially for fully passivated films. Within the framework of this model, climb modifies the dislocation structures that develop during plastic deformation and results in the formation of pile-ups on slip planes that do not contain any dislocation sources. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718432]

引用

页数：7

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