Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

被引：17
|
作者：
Zhang An
Zhao Xiao-Ru [1 ]
Duan Li-Bing
Liu Jin-Ming
Zhao Jian-Lin
机构：
[1] NW Polytech Univ, Key Lab Space Appl Phys & Chem, Minist Educ, Xian 710072, Peoples R China
来源：
CHINESE PHYSICS B | 2011年 / 20卷 / 05期
基金：
中国国家自然科学基金;
关键词：
grain boundary; ZnO thin film transistors; trap states; simulation; SIMULATION; SEMICONDUCTORS; DEGRADATION; TRANSPORT; LOCATION;
D O I：
10.1088/1674-1056/20/5/057201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The dependence of transistor characteristics on grain boundary (GB) position in short-channel ZnO thin film transistors (TFTs) has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si (poly-Si) TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.
引用
收藏
页数：6
相关论文
共 50 条
  • [1] Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position
    张安
    赵小如
    段利兵
    刘金铭
    赵建林
    [J]. Chinese Physics B, 2011, 20 (05) : 351 - 356
  • [2] Simulation study of the dependence of submicron polysilicon thin-film transistor output characteristics on grain boundary position
    Walker, PM
    Uno, S
    Mizuta, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (12): : 8322 - 8328
  • [3] Dependence of polycrystalline silicon thin-film transistor characteristics on the grain-boundary location
    Kimura, M
    Inoue, S
    Shimoda, T
    Eguchi, T
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 596 - 600
  • [4] Effects of grain boundary width on transfer characteristics of a polysilicon thin-film transistor
    Gupta, Navneet
    Tyagi, B. P.
    [J]. MODERN PHYSICS LETTERS B, 2006, 20 (13): : 771 - 776
  • [5] Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary
    周郁明
    何怡刚
    陆爱霞
    万青
    [J]. Chinese Physics B, 2009, 18 (09) : 3966 - 3969
  • [6] Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary
    Zhou Yu-Ming
    He Yi-Gang
    Lu Ai-Xia
    Wan Qing
    [J]. CHINESE PHYSICS B, 2009, 18 (09) : 3966 - 3969
  • [7] A proposed single grain-boundary thin-film transistor
    Oh, CH
    Matsumura, M
    [J]. IEEE ELECTRON DEVICE LETTERS, 2001, 22 (01) : 20 - 22
  • [8] Study of ZnO/BST interface for thin-film transistor (TFT) applications
    Kandpal, Kavindra
    Gupta, Navneet
    Singh, Jitendra
    Shekhar, Chandra
    [J]. SURFACES AND INTERFACES, 2021, 23
  • [9] Statistical modeling of grain-enhanced polysilicon thin-film transistor in consideration of grain boundary distribution
    Cheng, CF
    Poon, MC
    Kok, CW
    Chan, M
    [J]. AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004, 2004, 808 : 673 - 678
  • [10] Fast PEALD ZnO Thin-Film Transistor Circuits
    Mourey, Devin A.
    Zhao, Dalong A.
    Sun, Jie
    Jackson, Thomas N.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (02) : 530 - 534
12345