Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

被引：0
|
作者：
张安 [1 ]
赵小如 [1 ]
段利兵 [1 ]
刘金铭 [1 ]
赵建林 [1 ]
机构：
[1] Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Science,Northwestern Polytechnical University
来源：
Chinese Physics B | 2011年 / 20卷 / 05期
基金：
中国国家自然科学基金;
关键词：
grain boundary; ZnO thin film transistors; trap states; simulation;
D O I：
暂无
中图分类号：
TN321.5 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
The dependence of transistor characteristics on grain boundary(GB) position in short-channel ZnO thin film transistors(TFTs) has been investigated using two-dimensional numerical simulations.To simulate the device accurately,both tail states and deep-level states are taken into consideration.It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position,which is different from polycrystalline Si(poly-Si) TFTs.By analysing the mechanism of the carrier transportation in the device,it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with GB position.
引用
收藏
页码：351 / 356
页数：6
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