Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb

被引:10
|
作者
Wang, SH [1 ]
Robinson, JA
Mohney, SE
Bennett, BR
机构
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] USN, Res Lab, Washington, DC 20375 USA
来源
关键词
D O I
10.1116/1.1865119
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report a shallow, thermally stable Pt/W/Au (2/50/145 nm) Ohmic contact to p-InGaSb prepared using a brief (NH4)(2)S rinse as part of the premetallization surface treatment. Cross-sectional transmission electron microscopy reveals that the Pt/W/Au contacts have better thermal stability than previously reported Pd/W/Au contacts, with the Pt/W/Au contacts remaining shallow even after they are aged at 250 degrees C for 3 days. The specific contact resistances, of as-deposited Pt/W/Au, Pd/W/Au, Co/W/Au, Cu/W/Au, W/Au, Cr/W/Au, and Ag/W/Au contacts are also compared, and the (NH4) S rinse is found to partially relieve Fermi level pinning at the contact/p-InGaSb interface. (c) 2005 American Vacuum Society.
引用
收藏
页码:293 / 297
页数:5
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