Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects

被引：24
|
作者：
Jarndal, Anwar [1 ]
Ghannouchi, Fadhel M. [2 ]
机构：
[1] Univ Sharjah, Dept Elect & Comp Engn, Sharjah 27272, U Arab Emirates
[2] Univ Calgary, Dept Elect & Comp Engn, iRadio Lab, Calgary, AB T2N 1N4, Canada
来源：
SOLID-STATE ELECTRONICS | 2016年 / 123卷
关键词：
GaN HEMT; Large-signal modeling; Thermal and trapping effects; Genetic optimization; Power amplifier design; ALGAN/GAN; DISPERSION;
D O I：
10.1016/j.sse.2016.05.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, an improved modeling approach has been developed and validated for GaN high electron mobility transistors (HEMTs). The proposed analytical model accurately simulates the drain current and its inherent trapping and thermal effects. Genetic-algorithm-based procedure is developed to automatically find the fitting parameters of the model. The developed modeling technique is implemented on a packaged GaN-on-Si HEMT and validated by DC and small-/large-signal RF measurements. The model is also employed for designing and realizing a switch-mode inverse class-F power amplifier. The amplifier simulations showed a very good agreement with RF large-signal measurements. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：19 / 25
页数：7
相关论文
共 50 条
  • [31] Monte Carlo analysis of thermal effects in GaN HEMTs
    Mateos, J.
    Perez, S.
    Pardo, D.
    Gonzalez, T.
    PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES, 2009, : 459 - 462
  • [32] Modeling of Short-Channel Effects in GaN HEMTs
    Allaei, Mojtaba
    Shalchian, Majid
    Jazaeri, Farzan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3088 - 3094
  • [33] Fundamental Modeling of Radiation Effects in AlGaN/GaN HEMTs
    Patrick, E. E.
    Law, M. E.
    Li, S.
    Hwang, Y-H.
    Ren, F.
    Pearton, S. J.
    WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15, 2014, 61 (04): : 187 - 195
  • [34] NONLINEAR MODELING OF TRAPPING AND THERMAL EFFECTS ON GaAs AND GaN MESFET/HEMT DEVICES
    Chaibi, M.
    Fernandez, T.
    Mimouni, A.
    Rodriguez-Tellez, J.
    Tazon, A.
    Mediavilla, A.
    PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER, 2012, 124 : 163 - 186
  • [35] Investigation on the I-V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs
    Mao, Shuman
    Xu, Yuehang
    MICROMACHINES, 2018, 9 (11):
  • [36] Modeling the back gate effects of AlGaN/GaN HEMTs
    Wang, Li
    Zhang, Xuefeng
    You, Guanjun
    Xiong, Feng
    Liang, Lixin
    Hu, Yong
    Chen, Aping
    Liu, Jie
    Xu, Jian
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (04) : 872 - 876
  • [37] Modeling the back gate effects of AlGaN/GaN HEMTs
    Li Wang
    Xuefeng Zhang
    Guanjun You
    Feng Xiong
    Lixin Liang
    Yong Hu
    Aping Chen
    Jie Liu
    Jian Xu
    Journal of Computational Electronics, 2014, 13 : 872 - 876
  • [38] Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance
    Sommet, R.
    Mouginot, G.
    Quere, R.
    Ouarch, Z.
    Camiade, M.
    MICROELECTRONICS JOURNAL, 2012, 43 (09) : 611 - 617
  • [39] Modeling of Induced Gate Thermal Noise in HEMTs
    Dasgupta, Avirup
    Chauhan, Yogesh Singh
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (06) : 428 - 430
  • [40] An Improved Nonlinear Thermal Resistance Extraction Method for AlGaN/GaN HEMTs
    Zhao, Xiaodong
    Xu, Ruimin
    Xu, Yuehang
    2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP), 2015, : 261 - 263
12345