Wafer-scale Integration of Antimonide-based MWIR FPAs

被引:1
|
作者
Gurga, Alex [1 ]
Tang, Yan [1 ]
Terterian, Sevag [1 ]
Chen, Mary [1 ]
Carrasco, Diego [1 ]
Jenkins, James [1 ]
Wang, Shuoqin [1 ]
De Lyon, Terry [1 ]
Allali, Choukri [2 ]
Hollingsworth, Allen [2 ]
Curzan, J-P [3 ]
Caulfield, John [3 ]
Dhawan, Nishant [4 ]
Korth, William Z. [4 ]
Binh-Minh Nguyen [1 ]
机构
[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA
[2] Nhanced Semicond Inc, 1415 Bond St,Suite 155, Naperville, IL 60563 USA
[3] Cyan Syst Inc, 5385 Hollister Ave,Suite 105, Santa Barbara, CA 93111 USA
[4] Senseeker Engn Inc, 100 Frederick Lopez Rd, Santa Barbara, CA 93117 USA
来源
INFRARED TECHNOLOGY AND APPLICATIONS XLVII | 2021年 / 11741卷
关键词
Infrared detectors; MWIR; High Operating Temperature; heterogeneous integration; monolithic integration; III-V semiconductors; Silicon;
D O I
10.1117/12.2588311
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High performance infrared focal plane arrays (FPAs) play a critical role in a wide range of imaging applications. However the high cost associated with the required cooling and serially processed die-level hybridization is major barrier that has thwarted Mid-wavelength Infrared (MWIR) detector technology from penetrating large-volume, low-cost markets. Under the Defense Advanced Research Projects Agency (DARPA) WIRED program, the HRL team has developed a wafer level integration schemes to fabricate large format Antimonide-based MWIR FPAs on Si Read Out Integrated Circuit (ROIC) as a means to achieve significant fab cost reduction and enhanced production scalability. The DARPA-hard challenge we are addressing is the thermal and stress management in the integration of two dissimilar materials to avoid detector and ROIC degradation and to maintain structure integrity at the wafer scale. In addition, a digital ROIC with extremely large well capacity was designed and taped-out, in order to increase the operating temperature of the FPAs. In this talk, we discuss our progress under the DARPA WIRED program.
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页数:9
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