Real time observations of the growth and development of self-assembled GeSi islands on Si(001)

被引：0
|
作者：
Ross, FM [1 ]
Tromp, RM [1 ]
Tersoff, J [1 ]
Reuter, MC [1 ]
机构：
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS | 1999年 / 164期
关键词：
D O I：
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中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have examined the growth and evolution of Ge and GeSi islands on Si(001) using a UHV transmission electron microscope and a low energy electron microscope, both with in situ growth capabilities. Small Ge islands are known to be pyramidal in shape while larger islands are dome shaped. We find that the transition from pyramids to domes occurs through a series of asymmetric transition states. Cooling below the growth temperature transforms these transition shapes to domes. We explain these results with an anomalous coarsening model for island growth.
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页码：103 / 106
页数：4
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