Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices

被引：5

作者：

Yu, Liangchun ^{[1
,2
]}

Cheung, Kin P. ^{[1
]}

Dunne, Greg ^{[3
]}

Matocha, Kevin ^{[3
]}

Suehle, John S. ^{[1
]}

Sheng, Kuang ^{[2
]}

机构：

[1] NIST, 100 Bur Dr, Gaithersburg, MD 20899 USA

[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[3] GE Global Res, Niskayuna, NY 12309 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

MOSFET; Oxide reliability; TDDB; DEPENDENT-DIELECTRIC-BREAKDOWN; IMPACT IONIZATION; THERMAL OXIDES;

D O I：

10.4028/www.scientific.net/MSF.645-648.805

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Reliability of the gate oxide on SiC is a pressing concern for deploying SiC MOS-based devices in real systems. While good projected oxide reliability was obtained recently under highly accelerated test conditions, indication that such projection may not be valid at lower operating fields was also reported. In this work, results from long-term TDDB stress (over 7 months) at 6 MV/cm and 300 degrees C on 4H-SiC MOS capacitors is reported. We confirm that lifetime projection from high-field data continues to be valid and no change in field acceleration factor is observed. The discrepancy between our results and the early prediction of poor reliability is examined.

引用

页码：805 / +

页数：2

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