X pinch source characteristics for x-rays above 10 keV

被引：7

作者：

Shelkovenko, TA ^{[1
]}

Pikuz, SA ^{[1
]}

Romanova, V ^{[1
]}

Ivanenkov, GV ^{[1
]}

Song, BM ^{[1
]}

Chandler, KM ^{[1
]}

Mitchell, MD ^{[1
]}

Hammer, DA ^{[1
]}

机构：

[1] Cornell Univ, Plasma Studies Lab, Ithaca, NY 14853 USA

来源：

LASER-GENERATED AND OTHER LABORATORY X-RAY AND EUV SOURCES, OPTICS, AND APPLICATIONS | 2003年 / 5196卷

关键词：

X-ray source; X pinch; x-ray imaging; energetic electrons;

D O I：

10.1117/12.508749

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

X pinch radiation produced by electron beams accelerated in the X pinch minidiode ranging in energy from 10 to 100 keV has been studied and used to image a variety of different objects. The experiments have been carried out using the XP pulser (470 kA, 100 ns) at Cornell University and the BIN pulser (280 kA, 120 ns) at the P. N. Lebedev Physical Institute. This electron-beam-generated x-ray source's geometric, temporal and spectral properties have been studied over different energy ranges between 10 and 100 keV. The imaging was carried out in a low magnification scheme, and spatial resolution of a few tens of pm was demonstrated.

引用

页码：36 / 44

页数：9

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