Irradiation-induced failure of diamond based UV detector

被引：0
|
作者：
Wei, J
Ahn, J
机构：
[1] Chartered Semicond Mfg Ltd, Singapore, Singapore
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1999年 / 34卷 / 01期
关键词：
D O I：
10.1002/(SICI)1521-4079(199901)34:1<133::AID-CRAT133>3.0.CO;2-H
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Failure of UV detectors made on microwave plasma CVD grown diamond film indicates that the damage from electrical transient at interface between metal electrodes and diamond film can cause device dark current and noise increasing. The reliability of such UV detectors related to radiation effects is considered. The abnormal generation-recombination process of free carriers is presented. The main failure mechanisms, "currents crowding effect" and "self-accelerating failure" at the grain boundary are carried out to explain the irradiation-induced failure happened in the MSM diamond UV detectors.
引用
收藏
页码：133 / 140
页数：8
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