Investigation of Low Temperature Co-Co Direct Bonding and Co-Passivated Cu-Cu Direct Bonding

被引：4

作者：

Liu, Demin ^{[1
]}

Mei, Kuan-Chun ^{[1
]}

Hu, Han-Wen ^{[1
]}

Tsai, Yi-Chieh ^{[1
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

来源：

IEEE 72ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC 2022) | 2022年

关键词：

metal bonding; Co bonding; Co passivation; Cu bonding;

D O I：

10.1109/ECTC51906.2022.00040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The emerging interconnect material, Co, has been investigated as metal bonding material in this work. The Co-Co direct bonding has been successfully developed at both chip-level and wafer-level with excellent bonding results, including good bonding interface, strong mechanical strength, and high electrical performance. The behavior of inter-diffusion between Co bonding layers could be verified by the TEM/EDX analyses. Moreover, the post-bonding annealing process has been discussed, showing the negligible influence on Co-Co bonding. Finally, Co has been successfully developed as a metal passivation layer to achieve a low temperature Cu bonding process at 200 degrees C. The achievements reported in this paper explore the applications of next-generation interconnect materials in 3D IC technologies.

引用

页码：187 / 193

页数：7

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