Low temperature Cu-Cu direct bonding by (111) oriented nano-twin Cu

被引:0
|
作者
Juang, Jing-Ye [1 ]
Chu, Yi-Cheng [1 ]
Lu, Chia-Ling [1 ]
Chen, Chih [1 ]
Tu, King-Ning [1 ,2 ]
机构
[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[2] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a low temperature solid state diffusion bonding process with (111) highly oriented nano-twined Cu (nt-Cu) was proposed. A less void bonding interface was observed reveals a good bonding quality for the bonded samples. In addition, a large quasisingle grain was identified in the bonded film. Based on these results, it is believed that high strength and durable bonding structure can be accomplished by bonding two highly (111)-oriented nt-Cu films.
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页码:32 / 32
页数:1
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