The effect of controlled ion bombardment on the electronic structure of the Si(001) surface

被引：1
|
作者：
Roos, K. R. [1 ]
Lozano, J. [1 ]
Craig, J. H., Jr. [1 ]
机构：
[1] Bradley Univ, Dept Phys, Peoria, IL 61625 USA
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 07期
基金：
美国国家科学基金会;
关键词：
silicon; ion bombardment; X-ray photoelectron spectroscopy; ultraviolet photoelectron spectroscopy; surface defects; surface electronic phenomena;
D O I：
10.1016/j.apsusc.2007.08.023
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have studied the effects of controlled ion bombardment on the electronic structure of the Si(0 0 1) surface. The surface was exposed to various doses of Ar+ ions accelerated towards the surface at 500 eV. X-ray photoelectron spectroscopy (XPS) spectra of the irradiated H-terminated Si(0 0 1) surface reveal the appearance of peaks that are associated with the presence of cleaved Si bonds. Ultraviolet photoelectron spectroscopy (UPS) spectra of the irradiated Si(0 0 1)2 x 1 surface show that the dimer dangling-bond surface state decays monotonically with increasing dose. These results, coupled with previous scanning tunneling microscopy (STM) studies, indicate that the breaking of dimers, and possibly the creation of adatom-like defects, during ion irradiation are responsible for the changes in the electronic structure of the valence band for this surface. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1977 / 1980
页数：4
相关论文
共 50 条
  • [21] Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing
    S. Zh. Nimatov
    B. E. Umirzakov
    F. Ya. Khudaikulov
    D. S. Rumi
    Technical Physics, 2019, 64 : 1527 - 1529
  • [22] Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing
    Nimatov, S. Zh.
    Umirzakov, B. E.
    Khudaikulov, F. Ya.
    Rumi, D. S.
    TECHNICAL PHYSICS, 2019, 64 (10) : 1527 - 1529
  • [23] Effect of ion bombardment on the a-Si:H based surface passivation of c-Si surfaces
    Illiberi, A.
    Kudlacek, P.
    Smets, A. H. M.
    Creatore, M.
    van de Sanden, M. C. M.
    APPLIED PHYSICS LETTERS, 2011, 98 (24)
  • [24] Adsorption process, atomic geometry, electronic structure and stability of Si(001)/Te surface
    Miwa, RH
    Ferraz, AC
    SURFACE SCIENCE, 2000, 449 (1-3) : 180 - 190
  • [25] Atomic and electronic structure of the Si(001)2 x 1-K surface
    Shi, HQ
    Radny, MW
    Smith, PV
    SURFACE SCIENCE, 2004, 561 (2-3) : 215 - 226
  • [26] EXPERIMENTAL AND THEORETICAL-STUDIES OF THE ELECTRONIC AND CRYSTAL-STRUCTURE OF THE SI(001) SURFACE
    BURMISTROV, VV
    UMAROV, GR
    FIRSANOV, AA
    INORGANIC MATERIALS, 1987, 23 (10) : 1525 - 1526
  • [27] Structural and electronic properties of As:Gen on Si(001) surface
    Che, J.
    Zhang, K.
    Xie, X.
    Journal of Electron Spectroscopy and Related Phenomena, 1996, 80
  • [28] Structural and electronic properties of the Li/Si(001) surface
    Chung, JW
    SURFACE REVIEW AND LETTERS, 1996, 3 (03) : 1487 - 1494
  • [29] Structural and electronic properties of As:Gen on Si(001) surface
    Department of Physics, Fudan University, Shanghai 200433, China
    J Electron Spectrosc Relat Phenom, (169-172):
  • [30] Progressive changes in surface structure and electronic properties on Si(001) surface by CaF2 adsorption
    Alzahrani, A. Z.
    Usanmaz, D.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)
12345